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METAL INTERCONNECTS

The scaling and increasing 3D nature of integrated circuits require thinner, more precise and conformal interconnect metals. Both the copper for the interconnects and tungsten for the vias are deposited into trench-like structures. The 100% conformality of ALD allows further scaling of these integrated circuits. In addition, low resistivity of the metal films can be obtained due to the high density and the absence of gaps in the deposited films. Examples of interconnect metals include Copper (Cu), Tungsten Nitride (WN), Tungsten (W), Ruthenium (Ru) and others. Only Cambridge NanoTech ALD systems can grow these metals and more! Inquire about demo films!

ALD is suitable for many applications in Semiconductors and nanoelectronics including Gate Dielectrics, Gate Electrodes, Diffusion Barriers, and DRAM | Dynamic Random Access Memory. In the optical fields, ALD can be applied to Optical Dielectric Multilayer Structures / Filters, OLED (Organic Light Emitting Diode), Photonic Crystals and static Photonic Band Tuning, Transparent Conductors and Transparent Conducting Electrodes, TFEL or Thin Film Electroluminesence, Solar Cells, OLED Humidity Barrier, Precision Optics Coatings and Photonic Crystal Structures and Lasers. ALD is also applied to MEMS (micro electromechanical systems and Hydrophic & Anti-Stiction Layers in MEMS Devices. There are also applications of ALD in wear resistence, in coatings for blade edges and Nanocomposite Tungsten Disulphide solid lubricants. ALD is also used in nanostructures such as nanotubes & nanowires, and Atomic Force Microscope (AFM) tips. Other common applications of ALD are Catalysis & Catalyst Supports, Solid Oxide Fuel Cell Electrodes, Nano Glue, Biocompatible Coatings for medical instruments Ferromagnetic Transition Metals & Nanotubes and Internal Tube Liners and Inert Inner Linings.