Home

|

Atomic Layer Deposition

|

Products

|

Services

|

Science

|

Contact Us

|

Media

GATE ELECTRODES

In addition to gate dielectrics, the gate electrodes of Intel's next generation processors will also be made with ALD. Replacement of semiconducting polysilicon gate electrodes with metals is essential to eliminate the depletion layer, optimize the work function and to prevent reaction with high-k dielectrics. Examples of potential gate dielectrics include WN, Ru, Pt, RuO, TaN, TiN, HfN and others. The same advantages that were listed for gate dielectric deposition by ALD also apply here. The excellent adhesion, little damage to the gate dielectric and film smoothness of metals and metal nitrides deposited by ALD are further critical benefits.

ALD is suitable for many applications in Semiconductors and nanoelectronics including Gate Dielectrics, Gate Electrodes, Diffusion Barriers, and DRAM | Dynamic Random Access Memory. In the optical fields, ALD can be applied to Optical Dielectric Multilayer Structures / Filters, OLED (Organic Light Emitting Diode), Photonic Crystals and static Photonic Band Tuning, Transparent Conductors and Transparent Conducting Electrodes, TFEL or Thin Film Electroluminesence, Solar Cells, OLED Humidity Barrier, Precision Optics Coatings and Photonic Crystal Structures and Lasers. ALD is also applied to MEMS (micro electromechanical systems and Hydrophic & Anti-Stiction Layers in MEMS Devices. There are also applications of ALD in wear resistence, in coatings for blade edges and Nanocomposite Tungsten Disulphide solid lubricants. ALD is also used in nanostructures such as nanotubes & nanowires, and Atomic Force Microscope (AFM) tips. Other common applications of ALD are Catalysis & Catalyst Supports, Solid Oxide Fuel Cell Electrodes, Nano Glue, Biocompatible Coatings for medical instruments Ferromagnetic Transition Metals & Nanotubes and Internal Tube Liners and Inert Inner Linings.