ELECTROLUMINESCENCE
Atomic Layer Deposition (ALD), originally called atomic layer epitaxy (ALE), was developed in the
1970s by Suntola and Antson to meet the needs of producing high-quality, large-area flat panel displays
based on
thin film electroluminescence (TFEL), as discussed in this
review
. The core of a
TFEL device consists of a large
band-gap, doped semiconducting layer (e.g. ZnS:Mn) surrounded from both sides by insulating oxide
layers (aluminum titanium oxide, ATO) which all could be fabricated by ALD. More recently,
Thin films of sphalerite-type ZnSe were
grown
by ALD from elemental Zn and Se precursors. These films, grown on various substrates, show bright
blue edge emission accompanied by donor-acceptor pair emissions in the blue, green and red spectral regions.
Red, green and blue emissions mixed together give a white color, with a color temperature between 2400 and
4500 K depending on a layer thickness and temperature. ZnSe grown by ALD is in consequence a promising
material for the fabrication of semiconductor-based white light emitting
thin film electroluminescence displays.
In a separate publication
, blue- and green-emitting SrS:Cu
electroluminescent devices were successfully deposited using ALD.