ELECTROLUMINESCENCE



Atomic Layer Deposition (ALD), originally called atomic layer epitaxy (ALE), was developed in the 1970s by Suntola and Antson to meet the needs of producing high-quality, large-area flat panel displays based on thin film electroluminescence (TFEL), as discussed in this review . The core of a TFEL device consists of a large band-gap, doped semiconducting layer (e.g. ZnS:Mn) surrounded from both sides by insulating oxide layers (aluminum titanium oxide, ATO) which all could be fabricated by ALD. More recently, Thin films of sphalerite-type ZnSe were grown by ALD from elemental Zn and Se precursors. These films, grown on various substrates, show bright blue edge emission accompanied by donor-acceptor pair emissions in the blue, green and red spectral regions. Red, green and blue emissions mixed together give a white color, with a color temperature between 2400 and 4500 K depending on a layer thickness and temperature. ZnSe grown by ALD is in consequence a promising material for the fabrication of semiconductor-based white light emitting thin film electroluminescence displays. In a separate publication , blue- and green-emitting SrS:Cu electroluminescent devices were successfully deposited using ALD.