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OLED LAYERS

Sensitive alkali metal electrodes and organic thin films in organic light emitting diode (OLED) displays require protection from humidity. Water vapor can easily diffuse through organic film stacks. But a thin Al2O3 film deposited with ALD has proven to be highly effective as a humidity barrier. In addition to the humidity barrier, also the transparent conducting electrodes can be made with ALD (e.g. Al doped ZnO). ALD gate dielectrics for ZnO bit-select thin film transistors have been demonstrated. In principle it is also feasible to make the active thin film transistor layer (ZnO) with ALD.

ALD is suitable for many applications in Semiconductors and nanoelectronics including Gate Dielectrics, Gate Electrodes, Diffusion Barriers, and DRAM | Dynamic Random Access Memory. In the optical fields, ALD can be applied to Optical Dielectric Multilayer Structures / Filters, OLED (Organic Light Emitting Diode), Photonic Crystals and static Photonic Band Tuning, Transparent Conductors and Transparent Conducting Electrodes, TFEL or Thin Film Electroluminesence, Solar Cells, OLED Humidity Barrier, Precision Optics Coatings and Photonic Crystal Structures and Lasers. ALD is also applied to MEMS (micro electromechanical systems and Hydrophic & Anti-Stiction Layers in MEMS Devices. There are also applications of ALD in wear resistence, in coatings for blade edges and Nanocomposite Tungsten Disulphide solid lubricants. ALD is also used in nanostructures such as nanotubes & nanowires, and Atomic Force Microscope (AFM) tips. Other common applications of ALD are Catalysis & Catalyst Supports, Solid Oxide Fuel Cell Electrodes, Nano Glue, Biocompatible Coatings for medical instruments Ferromagnetic Transition Metals & Nanotubes and Internal Tube Liners and Inert Inner Linings.