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DRAM

The architecture, materials choice and process technology for stacked-capacitors in embedded-DRAM applications are a crucial concern for each new technology node. Capacitor technology is transitioning from the early days of planar PIS (poly/insulator/silicon) capacitors to the MIM (metal/insulator/metal) capacitors used for todays 65 nm technology node. ALD Ta2O5, HfO2 and especially Al2O3 are working well as high-k dielectric and ALD TiN as metal electrodes for use in 65 nm eDRAM technology. The use of ALD is identified to be an enabling technology for both high-k dielectrics and capacitor electrodes.

ALD is suitable for many applications in Semiconductors and nanoelectronics including Gate Dielectrics, Gate Electrodes, Diffusion Barriers, and DRAM | Dynamic Random Access Memory. In the optical fields, ALD can be applied to Optical Dielectric Multilayer Structures / Filters, OLED (Organic Light Emitting Diode), Photonic Crystals and static Photonic Band Tuning, Transparent Conductors and Transparent Conducting Electrodes, TFEL or Thin Film Electroluminesence, Solar Cells, OLED Humidity Barrier, Precision Optics Coatings and Photonic Crystal Structures and Lasers. ALD is also applied to MEMS (micro electromechanical systems and Hydrophic & Anti-Stiction Layers in MEMS Devices. There are also applications of ALD in wear resistence, in coatings for blade edges and Nanocomposite Tungsten Disulphide solid lubricants. ALD is also used in nanostructures such as nanotubes & nanowires, and Atomic Force Microscope (AFM) tips. Other common applications of ALD are Catalysis & Catalyst Supports, Solid Oxide Fuel Cell Electrodes, Nano Glue, Biocompatible Coatings for medical instruments Ferromagnetic Transition Metals & Nanotubes and Internal Tube Liners and Inert Inner Linings.